Abrasive and additive interactions in high selectivity STI CMP slurries
نویسندگان
چکیده
منابع مشابه
A Fixed Abrasive CMP Model
Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in both front-end (STI) and back-end (ILD) integrated circuit manufacturing. Conventional CMP processes utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. More recent work has examined the use of a fixed abrasive CMP pad [1], in which abrasive material is embedded...
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Shallow trench isolation (STI) requires a high quality oxide with superior fill capability provided by High Density Plasma (HDP) oxide. Unfortunately, the HDP deposition process can create large within die topographies that are difficult to polish directly using conventional silica slurries [1]. High Selective Slurries (HSS) were introduced in order to meet these stringent requirements and they...
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As advancing technologies increase the demand for planarity in integrated circuits, nanotopography has emerged as an important concern in shallow trench isolation (STI) on wafers polished by means of chemical-mechanical planarization (CMP). Nanotopography – starting silicon surface height variations 100 nm in amplitude extending across millimeter-scale lateral distances – can result in CMP-indu...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2014
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.10.004